Technical parameters/clamp voltage: | 125.1 V |
|
Technical parameters/test current: | 15 mA |
|
Technical parameters/peak pulse power: | 500 W |
|
Technical parameters/minimum reverse breakdown voltage: | 86.5 V |
|
Technical parameters/breakdown voltage: | 86.5 V |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/operating temperature: | -55℃ ~ 175℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | C-Package-2 |
|
Dimensions/Packaging: | C-Package-2 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Bag |
|
Other/Manufacturing Applications: | General |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N6129A
|
Microsemi | 完全替代 | B, Axial |
双向瞬态抑制器 BIDIRECTIONAL TRANSIENT SUPPRESSORS
|
||
1N6129A
|
Digitron | 完全替代 |
双向瞬态抑制器 BIDIRECTIONAL TRANSIENT SUPPRESSORS
|
|||
|
|
Microsemi | 类似代替 | C-Package-2 |
Trans Voltage Suppressor Diode, 500W, 69.2V V(RWM), Bidirectional, 1 Element, Silicon,
|
||
JANTXV1N6129A
|
Sensitron Semiconductor | 类似代替 |
Trans Voltage Suppressor Diode, 500W, 69.2V V(RWM), Bidirectional, 1 Element, Silicon,
|
|||
JANTXV1N6129A
|
Semtech Corporation | 类似代替 | Axial |
Trans Voltage Suppressor Diode, 500W, 69.2V V(RWM), Bidirectional, 1 Element, Silicon,
|
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