Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 800 mW |
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Technical parameters/minimum current amplification factor (hFE): | 50 |
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Technical parameters/dissipated power (Max): | 800 mW |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-5-3 |
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Dimensions/Packaging: | TO-5-3 |
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Physical parameters/operating temperature: | -65℃ ~ 200℃ |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Compliant with standards/military grade: | Yes |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
SEME-LAB | 功能相似 |
双极晶体管 - 双极结型晶体管(BJT) NPN Ampl/Switch
|
|||
2N2219
|
CDIL | 功能相似 |
双极晶体管 - 双极结型晶体管(BJT) NPN Ampl/Switch
|
|||
2N2219
|
Microsemi | 功能相似 | TO-39 |
双极晶体管 - 双极结型晶体管(BJT) NPN Ampl/Switch
|
||
2N2219A
|
Rectron | 功能相似 | TO-39 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
|
|
Semelab | 功能相似 | TO-205 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
|
|
New Jersey Semiconductor | 功能相似 | 3 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
2N2219A
|
Multicomp | 功能相似 | TO-39 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
2N2219A
|
ST Microelectronics | 功能相似 | TO-39 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
2N2219A
|
Continental Device | 功能相似 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
|||
2N2219A
|
Motorola | 功能相似 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
|||
2N2219A
|
Fairchild | 功能相似 | TO-226 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
2N2219A
|
CDIL | 功能相似 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
|||
2N2219A
|
National Semiconductor | 功能相似 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
|||
2N2219A
|
Rectron Semiconductor | 功能相似 | TO-39 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
2N2219A
|
Major Brands | 功能相似 | TO-39 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
|
|
Semelab | 功能相似 | TO-5 |
Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, METAL, TO-5, 3 PIN
|
||
2N2219AL
|
Microsemi | 功能相似 | TO-5-3 |
Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, METAL, TO-5, 3 PIN
|
||
|
|
Semicoa Semiconductor | 功能相似 | TO-39 |
Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-39, 3 PIN
|
||
JAN2N2219
|
Microsemi | 功能相似 | TO-39 |
Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-39, 3 PIN
|
||
JAN2N2219
|
M/A-Com | 功能相似 |
Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-39, 3 PIN
|
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