Technical parameters/forward voltage: | 1.2 V |
|
Technical parameters/reverse recovery time: | 250 ns |
|
Technical parameters/forward current: | 2000 mA |
|
Technical parameters/forward current (Max): | 2 A |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | G-2 |
|
Dimensions/Packaging: | G-2 |
|
Physical parameters/operating temperature: | -65℃ ~ 175℃ |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5619
|
Microsemi | 类似代替 | Case A |
Diode Switching 600V 2A 2Pin Case G-2
|
||
1N5619
|
Semtech Corporation | 类似代替 | G-2 |
Diode Switching 600V 2A 2Pin Case G-2
|
||
JANS1N5619
|
Microsemi | 完全替代 | A-Package-2 |
军事整流器 MILITARY RECTIFIERS
|
||
JANS1N5619US
|
Microsemi | 完全替代 | D-5A-2 |
Diode Switching 600V 1A 2Pin A-MELF
|
||
|
|
Sensitron Semiconductor | 完全替代 | 2 |
Rectifier Diode, 1Element, 1A, 600V V(RRM), Silicon, DO-7, HERMETIC SEALED PACKAGE-2
|
||
JANTXV1N5619
|
Microsemi | 完全替代 | A, Axial |
Rectifier Diode, 1Element, 1A, 600V V(RRM), Silicon, DO-7, HERMETIC SEALED PACKAGE-2
|
||
JANTXV1N5619
|
Semtech Corporation | 完全替代 | G-2 |
Rectifier Diode, 1Element, 1A, 600V V(RRM), Silicon, DO-7, HERMETIC SEALED PACKAGE-2
|
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