Technical parameters/Input capacitance (Ciss): | 83pF @24V(Vds) |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 500 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-236 |
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Dimensions/Length: | 3 mm |
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Dimensions/Width: | 1.4 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | TO-236 |
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Other/Product Lifecycle: | Not Recommended |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSH103,215
|
Nexperia | 功能相似 | SOT-23-3 |
Nexperia Si N沟道 MOSFET BSH103,215, 850 mA, Vds=30 V, 3引脚 SOT-23 (TO-236AB)封装
|
||
MMBF0201NLT1
|
ON Semiconductor | 功能相似 | SOT-23-3 |
功率MOSFET 300毫安, 20伏 Power MOSFET 300 mAmps, 20 Volts
|
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