Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | -45V |
|
Technical parameters/Maximum allowable collector current: | -0.5A |
|
Technical parameters/minimum current amplification factor (hFE): | 100 |
|
Technical parameters/maximum current amplification factor (hFE): | 600 |
|
Encapsulation parameters/Encapsulation: | SOT-23 |
|
Dimensions/Packaging: | SOT-23 |
|
Other/Product Lifecycle: | Active |
|
Other/Minimum Packaging: | 3000 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC807-40LT3G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC807-40LT3G Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 225 mW, -500 mA, 40 hFE 新
|
||
BCX17,215
|
NXP | 功能相似 | SOT-23-3 |
TO-236AB PNP 45V 0.5A
|
||
BCX17,215
|
Nexperia | 功能相似 | SOT-23-3 |
TO-236AB PNP 45V 0.5A
|
||
BCX17,215
|
Philips | 功能相似 | TO-236 |
TO-236AB PNP 45V 0.5A
|
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