Technical parameters/dissipated power: | 300000 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 480 V |
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Technical parameters/rated power (Max): | 300 W |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 300 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Length: | 10.67 mm |
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Dimensions/Width: | 9.65 mm |
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Dimensions/Height: | 4.83 mm |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -40℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ISL9V5045S3S
|
ON Semiconductor | 功能相似 | TO-263-3 |
EcoSPARK N沟道IGBT点火 EcoSPARK N-Channel Ignition IGBT
|
||
ISL9V5045S3ST
|
Fairchild | 类似代替 | TO-263-3 |
分离式 IGBT，Fairchild Semiconductor ### IGBT 分立件和模块，Fairchild Semiconductor 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。
|
||
ISL9V5045S3ST
|
ON Semiconductor | 类似代替 | TO-263-3 |
分离式 IGBT，Fairchild Semiconductor ### IGBT 分立件和模块，Fairchild Semiconductor 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。
|
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