Technical parameters/rated voltage (DC): | 55.0 V |
|
Technical parameters/rated current: | 2.00 A |
|
Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 1W (Ta) |
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Technical parameters/product series: | IRLL014N |
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Technical parameters/drain source voltage (Vds): | 55 V |
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Technical parameters/Continuous drain current (Ids): | 2.00 A |
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Technical parameters/rise time: | 4.90 ns |
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Technical parameters/Input capacitance (Ciss): | 230pF @25V(Vds) |
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Technical parameters/dissipated power (Max): | 1W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TO-261-4 |
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Dimensions/Packaging: | TO-261-4 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | End of Life |
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Other/Packaging Methods: | Tape |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLL014NPBF
|
International Rectifier | 类似代替 | SOT-223-4 |
INFINEON IRLL014NPBF 晶体管, MOSFET, N沟道, 2 A, 55 V, 140 mohm, 10 V, 2 V
|
||
IRLL014NPBF
|
IFA | 类似代替 |
INFINEON IRLL014NPBF 晶体管, MOSFET, N沟道, 2 A, 55 V, 140 mohm, 10 V, 2 V
|
|||
STN2NF06L
|
ST Microelectronics | 功能相似 | SOT-223 |
N沟道60V - 0.1欧姆 - 2A SOT- 223 STripFET⑩ II功率MOSFET N-CHANNEL 60V - 0.1 ohm - 2A SOT-223 STripFET⑩ II POWER MOSFET
|
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