Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.23 Ω |
|
Technical parameters/dissipated power: | 250 W |
|
Technical parameters/threshold voltage: | 5 V |
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Technical parameters/drain source voltage (Vds): | 500 V |
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Technical parameters/rise time: | 375 ns |
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Technical parameters/Input capacitance (Ciss): | 2400pF @25V(Vds) |
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Technical parameters/rated power (Max): | 250 W |
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Technical parameters/descent time: | 105 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 250 W |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.1 mm |
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Dimensions/Width: | 4.7 mm |
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Dimensions/Height: | 9.4 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Other/Manufacturing Applications: | Power management, lighting, consumer electronics products |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP20NK50Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP20NK50Z 晶体管, MOSFET, N沟道, 17 A, 500 V, 270 mohm, 10 V, 3.75 V
|
||
STP23NM50N
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™，500V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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