Technical parameters/polarity: | NPN+PNP |
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Technical parameters/breakdown voltage (collector emitter): | 60 V |
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Technical parameters/Maximum allowable collector current: | 4A |
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Technical parameters/minimum current amplification factor (hFE): | 2000 @3A, 4V |
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Technical parameters/rated power (Max): | 4 W |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | SIP-12 |
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Dimensions/Packaging: | SIP-12 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMA6010
|
Sanken Electric | 功能相似 | SIP-12 |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 6-Element, NPN and PNP, Silicon, Plastic/Epoxy, 12 Pin, SMA, 12 PIN
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