Technical parameters/polarity: | NPN+NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 65 V |
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Technical parameters/Maximum allowable collector current: | 0.1A |
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Technical parameters/minimum current amplification factor (hFE): | 200 |
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Technical parameters/maximum current amplification factor (hFE): | 450 |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-363 |
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Dimensions/Packaging: | SOT-363 |
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Other/Minimum Packaging: | 3000 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC846BDW1T1G
|
ON Semiconductor | 功能相似 | SC-70-6 |
ON SEMICONDUCTOR BC846BDW1T1G 双极晶体管阵列, 通用, 双NPN, 65 V, 380 mW, 100 mA, 200 hFE, SOT-363
|
||
|
|
Panjit | 类似代替 | SOT-363 |
小信号 NPN 晶体管,Nexperia ### 双极晶体管,Nexperia
|
||
|
|
Micro Commercial Components | 类似代替 |
小信号 NPN 晶体管,Nexperia ### 双极晶体管,Nexperia
|
|||
BC846BS
|
NXP | 类似代替 | SOT-363 |
小信号 NPN 晶体管,Nexperia ### 双极晶体管,Nexperia
|
||
BC846BS-TP
|
Micro Commercial Components | 类似代替 | SOT-363 |
SOT-363 NPN 65V 0.1A
|
||
|
|
Micro Commercial Components | 功能相似 | SOT-363 |
SOT-363 NPN 65V 0.1A
|
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