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Model 2SB1132
Description 中等功率晶体管（ -32V ， -1A ） Medium Power Transistor (−32V,−1A)
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Brand: ROHM Semiconductor
Packaging SOT-89
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Packaging method
Standard packaging quantity 1
0.27  yuan 0.27yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2849) Minimum order quantity(1)
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Encapsulation parameters/Encapsulation:

SOT-89

 

Dimensions/Packaging:

SOT-89

 

Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO):

-40V

 

Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO):

−32V

 

Other/collector continuous output current ICCollector Current (IC):

-1A

 

Other/Cut off Frequency fTTransmission Frequency (fT):

150MHz

 

Other/DC current gain hFEDC Current Gain (hFE):

82~180

 

Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage:

−500mV/-0.5V

 

Other/dissipated power PcPoWer Dissipation:

500mW/0.5W

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2SB1132R 2SB1132R ROHM Semiconductor 功能相似 MPT
晶体管| BJT | PNP | 32V V（ BR ） CEO | 1A I（C ） | SC- 62 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
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