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Model 2N7002L
Description 小信号MOSFET 60 V 115 mA时, N沟道SOT- 23 Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
Product QR code
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.23  yuan 0.23yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(2591) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

7.5 Ω

 

Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

0.2 W

 

Technical parameters/threshold voltage:

2.5 V

 

Technical parameters/Input capacitance:

12.8 pF

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/Continuous drain current (Ids):

0.115A

 

Technical parameters/Input capacitance (Ciss):

50pF @25V(Vds)

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

200mW (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23-3

 

Dimensions/Packaging:

SOT-23-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Minimum Packaging:

3000

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

lead-free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2N7002-E3 2N7002-E3 VISHAY 功能相似 SOT-23
2N7002 Series N-Channel 60V 7.5Ω 0.2W Surface Mount Mosfet - SOT-23-3
PDF
2N7002ET1G 2N7002ET1G ON Semiconductor 类似代替 SOT-23-3
ON SEMICONDUCTOR 2N7002ET1G 晶体管, MOSFET, N沟道, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V
2V7002LT1G 2V7002LT1G ON Semiconductor 类似代替 SOT-23-3
N 通道功率 MOSFET,60V,ON Semiconductor ### MOSFET 晶体管,ON Semiconductor

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