Technical parameters/minimum current amplification factor (hFE): | 40 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 600 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-343 |
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Dimensions/Length: | 2.2 mm |
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Dimensions/Width: | 1.35 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-343 |
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Other/Product Lifecycle: | Unknown |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BFG21W,115
|
NXP | 类似代替 | SOT-343 |
NXP BFG21W,115. 射频宽带晶体管, NPN, 4.5V, 18GHZ, 4-SOT-343R
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Siemens Semiconductor | 功能相似 |
NPN Silicon RF Transistor (Q62702-F1721)
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