Technical parameters/Input capacitance: | 1100 pF |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/rise time: | 52 ns |
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Technical parameters/Input capacitance (Ciss): | 1100pF @25V(Vds) |
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Technical parameters/rated power (Max): | 50 W |
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Technical parameters/descent time: | 26 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 50 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.73 mm |
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Dimensions/Width: | 6.22 mm |
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Dimensions/Height: | 2.39 mm |
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Dimensions/Packaging: | TO-252-3 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDD850N10LD
|
Fairchild | 功能相似 | TO-252-5 |
PowerTrench® N 通道 MOSFET，10A 至 19.9A，Fairchild Semiconductor ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
|
||
FDD850N10LD
|
ON Semiconductor | 功能相似 | TO-252 |
PowerTrench® N 通道 MOSFET，10A 至 19.9A，Fairchild Semiconductor ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
|
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