Technical parameters/dissipated power: | 833 mW |
|
Technical parameters/output voltage (Max): | 650 mV |
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Technical parameters/input current (Min): | 32 μA |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 833 mW |
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Technical parameters/power supply voltage: | 3V ~ 3.6V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 4.9 mm |
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Dimensions/Width: | 3.9 mm |
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Dimensions/Height: | 1.45 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | 5A991.b.1 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS91D176TMA/NOPB
|
TI | 完全替代 | SOIC-8 |
TEXAS INSTRUMENTS DS91D176TMA/NOPB 驱动器, LVDS, LVDS 收发器, 1.3 ns, 29.5 mA, -40 °C, 85 °C, 3 V
|
||
DS91D176TMA/NOPB
|
National Semiconductor | 完全替代 | SOIC-8 |
TEXAS INSTRUMENTS DS91D176TMA/NOPB 驱动器, LVDS, LVDS 收发器, 1.3 ns, 29.5 mA, -40 °C, 85 °C, 3 V
|
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