Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.03 Ω |
|
Technical parameters/dissipated power: | 85 W |
|
Technical parameters/threshold voltage: | 3 V |
|
Technical parameters/Input capacitance: | 650 pF |
|
Technical parameters/drain source voltage (Vds): | 55 V |
|
Technical parameters/rise time: | 62 ns |
|
Technical parameters/Input capacitance (Ciss): | 872pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 85 W |
|
Technical parameters/descent time: | 20 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 85W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK7635-55A
|
NXP | 功能相似 | D2PAK |
TrenchMOS(TM) standard level FET
|
||
BUK7635-55A,118
|
NXP | 类似代替 | TO-263-3 |
晶体管, MOSFET, N沟道, 35 A, 55 V, 0.03 ohm, 10 V, 3 V
|
||
BUK7635-55A,118
|
Nexperia | 类似代替 | TO-263-3 |
晶体管, MOSFET, N沟道, 35 A, 55 V, 0.03 ohm, 10 V, 3 V
|
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