Technical parameters/number of pins: | 3 |
|
Technical parameters/dissipated power: | 650 mW |
|
Technical parameters/DC current gain (hFE): | 63 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-223 |
|
Dimensions/Packaging: | SOT-223 |
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Other/Product Lifecycle: | Active |
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Other/Manufacturing Applications: | Industrial, Power Management, Automotive |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP53-10T1G
|
ON Semiconductor | 类似代替 | TO-261-4 |
PNP 晶体管,超过 1A,On Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。
|
||
BCP53T1
|
MOTO | 类似代替 |
中功率PNP硅高电流晶体管的表面贴装 MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
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