Technical parameters/rated voltage (DC): | 20.0 V |
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Technical parameters/rated current: | 10.0 mA |
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Technical parameters/drain source voltage (Vds): | 20.0 V |
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Technical parameters/Continuous drain current (Ids): | 10.0 mA |
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Technical parameters/breakdown voltage: | 20 V |
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Technical parameters/Input capacitance (Ciss): | 3.5pF @5V(Vds) |
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Technical parameters/rated power (Max): | 100 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
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Dimensions/Packaging: | TO-226-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Mitsubishi | 功能相似 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET
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