Technical parameters/frequency: | 2 MHz |
|
Technical parameters/rated voltage (DC): | -60.0 V |
|
Technical parameters/rated current: | -10.0 A |
|
Technical parameters/polarity: | PNP |
|
Technical parameters/dissipated power: | 1.75 W |
|
Technical parameters/gain bandwidth product: | 2 MHz |
|
Technical parameters/breakdown voltage (collector emitter): | 60 V |
|
Technical parameters/Maximum allowable collector current: | 10A |
|
Technical parameters/minimum current amplification factor (hFE): | 20 @4A, 4V |
|
Technical parameters/maximum current amplification factor (hFE): | 100 |
|
Technical parameters/rated power (Max): | 1.75 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 1750 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-252-3 |
|
Dimensions/Length: | 6.6 mm |
|
Dimensions/Width: | 6.1 mm |
|
Dimensions/Height: | 2.3 mm |
|
Dimensions/Packaging: | TO-252-3 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD2955G
|
ON Semiconductor | 完全替代 | TO-252-3 |
MJD 系列 60 V 10 A PNP 互补 功率晶体管 - TO-252-3
|
||
MJD2955T4G
|
ON Semiconductor | 完全替代 | TO-252-3 |
ON SEMICONDUCTOR MJD2955T4G Bipolar (BJT) Single Transistor, PNP, -60 V, 2 MHz, 1.75 W, -10 A, 5 hFE 新
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review