Technical parameters/frequency: | 2 MHz |
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Technical parameters/dissipated power: | 1.75 W |
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Technical parameters/breakdown voltage (collector emitter): | 60 V |
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Technical parameters/minimum current amplification factor (hFE): | 20 @4A, 4V |
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Technical parameters/rated power (Max): | 1.75 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1750 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: |
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Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD2955G
|
ON Semiconductor | 完全替代 | TO-252-3 |
MJD 系列 60 V 10 A PNP 互补 功率晶体管 - TO-252-3
|
||
MJD2955T4G
|
ON Semiconductor | 完全替代 | TO-252-3 |
ON SEMICONDUCTOR MJD2955T4G Bipolar (BJT) Single Transistor, PNP, -60 V, 2 MHz, 1.75 W, -10 A, 5 hFE 新
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