Technical parameters/rated voltage (DC): | 400 V |
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Technical parameters/rated current: | 8.00 A |
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Technical parameters/dissipated power: | 80000 mW |
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Technical parameters/breakdown voltage (collector emitter): | 400 V |
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Technical parameters/minimum current amplification factor (hFE): | 200 @4A, 5V |
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Technical parameters/rated power (Max): | 80 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 80000 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Height: | 9.2 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJE5742G
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON SEMICONDUCTOR MJE5742G 单晶体管 双极, 达林顿, NPN, 400 V, 80 W, 8 A, 400 hFE
|
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