Technical parameters/breakdown voltage (collector emitter): | 100 V |
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Technical parameters/minimum current amplification factor (hFE): | 120 @3A, 5V |
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Technical parameters/rated power (Max): | 1.5 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1500 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bag |
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Compliant with standards/RoHS standards: |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSC2334YTU
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Fairchild | 类似代替 | TO-220-3 |
NPN 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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