Technical parameters/forward voltage: | 1V @6A |
|
Technical parameters/Maximum forward surge current (Ifsm): | 250 A |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -50 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SIP-4 |
|
Dimensions/Length: | 23.7 mm |
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Dimensions/Width: | 7.1 mm |
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Dimensions/Height: | 19.3 mm |
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Dimensions/Packaging: | SIP-4 |
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Physical parameters/operating temperature: | -50℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
GBU6A-BP
|
Micro Commercial Components | 功能相似 | SIP-4 |
GBU 50V 6A
|
||
GBU6A-E3/45
|
Vishay Semiconductor | 类似代替 | SIP-4 |
桥式整流器 50 Volt 6.0 Amp Glass Passivated
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GBU6A-E3/45
|
VISHAY | 类似代替 | GBU-4 |
桥式整流器 50 Volt 6.0 Amp Glass Passivated
|
||
|
|
EIC | 类似代替 |
GENESIC SEMICONDUCTOR KBU6A Bridge Rectifier Diode, Single, 50V, 6A, SIP, 1V, 4Pins
|
|||
|
|
Gulfsemi | 类似代替 |
GENESIC SEMICONDUCTOR KBU6A Bridge Rectifier Diode, Single, 50V, 6A, SIP, 1V, 4Pins
|
|||
KBU6A
|
DC Components | 类似代替 |
GENESIC SEMICONDUCTOR KBU6A Bridge Rectifier Diode, Single, 50V, 6A, SIP, 1V, 4Pins
|
|||
KBU6A
|
GeneSiC Semiconductor | 类似代替 | SIP-4 |
GENESIC SEMICONDUCTOR KBU6A Bridge Rectifier Diode, Single, 50V, 6A, SIP, 1V, 4Pins
|
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