Technical parameters/rated voltage (DC): | -50.0 V |
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Technical parameters/rated current: | -100 mA |
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Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 300 mW |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 100mA |
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Technical parameters/minimum current amplification factor (hFE): | 20 @10mA, 5V |
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Technical parameters/rated power (Max): | 300 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/gain bandwidth: | 200 MHz |
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Technical parameters/dissipated power (Max): | 300 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
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Dimensions/Height: | 5.33 mm |
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Dimensions/Packaging: | TO-226-3 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJN4301RBU
|
Fairchild | 类似代替 | TO-226-3 |
Trans Digital BJT PNP 50V 100mA 3Pin TO-92 Bulk
|
||
FJN4301RBU
|
ON Semiconductor | 类似代替 | TO-226-3 |
Trans Digital BJT PNP 50V 100mA 3Pin TO-92 Bulk
|
||
FJN4301RTA
|
ON Semiconductor | 功能相似 | TO-92-3 |
Fairchild Semiconductor ### 数字晶体管,Fairchild Semiconductor 配备电阻器的双极性晶体管也称为数字晶体管或偏流电阻器的晶体管,包含一个或两个集成电阻器。 单一系列输入电阻器,或两个电阻器的分压器能直接从数字源驱动这些设备。 提供单和双晶体管型号。
|
||
FJN4301RTA
|
Fairchild | 功能相似 | TO-226-3 |
Fairchild Semiconductor ### 数字晶体管,Fairchild Semiconductor 配备电阻器的双极性晶体管也称为数字晶体管或偏流电阻器的晶体管,包含一个或两个集成电阻器。 单一系列输入电阻器,或两个电阻器的分压器能直接从数字源驱动这些设备。 提供单和双晶体管型号。
|
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