Technical parameters/product series: | IRF430 |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Infineon | 功能相似 |
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
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2N6762
|
IXYS Semiconductor | 功能相似 |
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
|||
2N6762
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
|||
|
|
Semelab | 功能相似 |
N-CHANNEL POWER MOSFET
|
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IRF430
|
SEME-LAB | 功能相似 |
N-CHANNEL POWER MOSFET
|
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IRF430
|
Fairchild | 功能相似 |
N-CHANNEL POWER MOSFET
|
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|
|
Unitrode | 功能相似 |
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
|||
JANTX2N6762
|
Infineon | 功能相似 | TO-204 |
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
||
JANTX2N6762
|
International Rectifier | 功能相似 | TO-3 |
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
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