Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 20 W |
|
Technical parameters/breakdown voltage (collector emitter): | 300 V |
|
Technical parameters/Maximum allowable collector current: | 1A |
|
Technical parameters/minimum current amplification factor (hFE): | 25 @250mA, 10V |
|
Technical parameters/rated power (Max): | 20 W |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 20000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-66 |
|
Dimensions/Packaging: | TO-66 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | -55℃ ~ 200℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3739
|
Microsemi | 完全替代 | TO-66 |
NPN Transistor
|
||
2N3739
|
Central Semiconductor | 完全替代 | TO-66 |
NPN Transistor
|
||
NTE124
|
NTE Electronics | 类似代替 | TO-66 |
TO-66 NPN 300V 1A
|
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