Technical parameters/breakdown voltage (collector emitter): | 30 V |
|
Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 10V |
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Technical parameters/rated power (Max): | 800 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-205 |
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Dimensions/Packaging: | TO-205 |
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Physical parameters/operating temperature: | -55℃ ~ 200℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube, Rail |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
SEME-LAB | 功能相似 |
双极晶体管 - 双极结型晶体管(BJT) NPN Ampl/Switch
|
|||
2N2219
|
CDIL | 功能相似 |
双极晶体管 - 双极结型晶体管(BJT) NPN Ampl/Switch
|
|||
2N2219
|
Microsemi | 功能相似 | TO-39 |
双极晶体管 - 双极结型晶体管(BJT) NPN Ampl/Switch
|
||
2N2219ALEADFREE
|
Central Semiconductor | 功能相似 | TO-39 |
TO-39 NPN 40V 0.8A
|
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