Technical parameters/dissipated power: | 175 W |
|
Technical parameters/breakdown voltage (collector emitter): | 400 V |
|
Technical parameters/minimum current amplification factor (hFE): | 12 @5A, 2V |
|
Technical parameters/rated power (Max): | 175 W |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 175000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-3 |
|
Dimensions/Packaging: | TO-3 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: |
| |
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Quanzhou Jinmei Electronic | 完全替代 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
|||
2N6547
|
Major Brands | 完全替代 | TO-204 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
||
2N6547
|
ST Microelectronics | 完全替代 | TO-3 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
||
2N6547
|
SavantIC Semiconductor | 完全替代 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
|||
2N6547
|
Multicomp | 完全替代 | TO-3 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
||
2N6547
|
Solid State | 完全替代 | TO-3 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
||
2N6547
|
Inchange Semiconductor | 完全替代 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
|||
2N6547
|
Central Semiconductor | 完全替代 | TO-204 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
||
2N6547
|
Microchip | 完全替代 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
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