Technical parameters/tolerances: | ±5 % |
|
Technical parameters/forward voltage: | 1.1V @200mA |
|
Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/test current: | 7.5 mA |
|
Technical parameters/voltage regulation value: | 6.2 V |
|
Technical parameters/rated power (Max): | 500 mW |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 500 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-35-2 |
|
Dimensions/Length: | 5.08 mm |
|
Dimensions/Packaging: | DO-35-2 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bag |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N3780
|
Microsemi | 功能相似 | DO-7 |
Zener Diode, 6.7V V(Z), 5%, 0.4W, Silicon, DO-7, DO-7, 2 PIN
|
||
1N821A
|
Microsemi | 功能相似 | DO-35-2 |
Zener Diode Temperature Compensated 5.9-6.5V 0.5W(1/2W) Do-7 Case 0.01 Tc
|
||
|
|
International Semiconductor | 功能相似 |
Zener Diode Temperature Compensated 5.9-6.5V 0.5W(1/2W) Do-7 Case 0.01 Tc
|
|||
1N821A
|
American Power Devices | 功能相似 | DO-7 |
Zener Diode Temperature Compensated 5.9-6.5V 0.5W(1/2W) Do-7 Case 0.01 Tc
|
||
1N821A
|
NTE Electronics | 功能相似 |
Zener Diode Temperature Compensated 5.9-6.5V 0.5W(1/2W) Do-7 Case 0.01 Tc
|
|||
1N821A-1
|
Microsemi | 完全替代 | DO-35 |
6.2与6.55伏温度补偿6.2和6.55伏温度补偿 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review