Technical parameters/forward voltage: | 2.3V @500A |
|
Technical parameters/forward current: | 35000 mA |
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Technical parameters/forward current (Max): | 35 A |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-5-2 |
|
Dimensions/Packaging: | DO-5-2 |
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Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Compliant with standards/military grade: | Yes |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 功能相似 | ~0.8°C/W |
军事硅电力整流器 Military Silicon Power Rectifier
|
||
1N3768R
|
VISHAY | 功能相似 | DO-203AB |
军事硅电力整流器 Military Silicon Power Rectifier
|
||
1N3768R
|
GeneSiC Semiconductor | 功能相似 | DO-203AB |
军事硅电力整流器 Military Silicon Power Rectifier
|
||
JANTXV1N3768R
|
Microsemi | 功能相似 | DO-203AB |
军事硅电力整流器 Military Silicon Power Rectifier
|
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