Technical parameters/breakdown voltage (collector emitter): | 80 V |
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Technical parameters/minimum current amplification factor (hFE): | 40 @1A, 2V |
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Technical parameters/rated power (Max): | 2 W |
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Encapsulation parameters/Encapsulation: | TO-111-4 |
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Dimensions/Packaging: | TO-111-4 |
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Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: |
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Compliant with standards/lead standards: |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Microsemi | 功能相似 | TO-111-4 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 4 Pin, TO-111/I, 4 PIN
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