Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 1 W |
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Technical parameters/breakdown voltage (collector emitter): | 55 V |
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Technical parameters/Maximum allowable collector current: | 1.5A |
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Technical parameters/minimum current amplification factor (hFE): | 35 @200mA, 4V |
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Technical parameters/rated power (Max): | 1 W |
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Technical parameters/operating temperature (Max): | 200 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 1000 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-5 |
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Dimensions/Packaging: | TO-5 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bag |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Central Semiconductor | 功能相似 | TO-39 |
Trans GP BJT NPN 55V 1.5A 3Pin TO-39 Box
|
||
2N1482
|
Microchip | 功能相似 | TO-5-3 |
Trans GP BJT NPN 55V 1.5A 3Pin TO-39 Box
|
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