Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 10V |
|
Technical parameters/rated power (Max): | 500 mW |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 500 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-206 |
|
Dimensions/Packaging: | TO-206 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bag |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 完全替代 | HSOT |
HSOT NPN 50V 0.8A
|
||
JANHC2N2222AL
|
Microsemi | 功能相似 | TO-18 |
TO-18 NPN 50V 0.8A
|
||
JANS2N2222A
|
Semicoa Semiconductor | 完全替代 | TO-18 |
每NPN型硅开关晶体管合格MIL -PRF- 255分之19500 NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255
|
||
JANS2N2222A
|
M/A-Com | 完全替代 |
每NPN型硅开关晶体管合格MIL -PRF- 255分之19500 NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255
|
|||
JANS2N2222A
|
Micropac | 完全替代 |
每NPN型硅开关晶体管合格MIL -PRF- 255分之19500 NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255
|
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