Technical parameters/power supply voltage (DC): | 3.30 V, 5.00 V |
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Technical parameters/rise/fall time: | 1 ns |
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Technical parameters/output current: | ≤4.00 mA |
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Technical parameters/power supply current: | 10.0 mA |
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Technical parameters/number of channels: | 1 |
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Technical parameters/number of pins: | 8 |
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Technical parameters/dissipated power: | 159 mW |
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Technical parameters/data rate: | 100 Mbps |
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Technical parameters/rise time: | 2 ns |
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Technical parameters/isolation voltage: | 2500 Vrms |
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Technical parameters/Over temperature protection: | No |
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Technical parameters/input current (Min): | 10 μA |
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Technical parameters/forward voltage (Max): | 5.5 V |
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Technical parameters/descent time (Max): | 2 ns |
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Technical parameters/rise time (Max): | 2 ns |
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Technical parameters/operating temperature (Max): | 125 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 159 mW |
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Technical parameters/power supply voltage: | 3V ~ 5.5V |
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Technical parameters/power supply voltage (Max): | 5.5 V |
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Technical parameters/power supply voltage (Min): | 3 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Width: | 4 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -40℃ ~ 125℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Metho Alternative material
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