Technical parameters/power supply voltage (DC): | 5.00V (min) |
|
Technical parameters/number of output interfaces: | 2 |
|
Technical parameters/dissipated power: | 0.625 W |
|
Technical parameters/product series: | IRS2302 |
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Technical parameters/rise time: | 220 ns |
|
Technical parameters/descent time: | 80 ns |
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Technical parameters/descent time (Max): | 80 ns |
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Technical parameters/rise time (Max): | 220 ns |
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Technical parameters/operating temperature (Max): | 125 ℃ |
|
Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 625 mW |
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Technical parameters/power supply voltage: | 5V ~ 20V |
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Technical parameters/power supply voltage (Max): | 20 V |
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Technical parameters/power supply voltage (Min): | 5 V |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -40℃ ~ 125℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRS2301S
|
Infineon | 完全替代 | SOIC-8 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
||
AUIRS2301STR
|
IFC | 完全替代 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
|||
AUIRS2301STR
|
International Rectifier | 完全替代 | SOIC |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
||
IRS2004SPBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRS2004SPBF 双路芯片, IGBT/MOSFET, 半桥, 10V-20V电源, 600mA输出, 150ns延迟, SOIC-8
|
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