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Model IRLI630GPBF
Description VISHAY IRLI630GPBF. 晶体管, MOSFET, N沟道, 5.9 A, 200 V, 400 mohm, 5 V, 1 V
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Brand: Vishay Semiconductor
Packaging TO-220
Delivery time
Packaging method Tube
Standard packaging quantity 1
6.63  yuan 6.63yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4447) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.4 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

32 W

 

Technical parameters/threshold voltage:

1 V

 

Technical parameters/drain source voltage (Vds):

200 V

 

Technical parameters/Continuous drain current (Ids):

6.20 A

 

Technical parameters/rise time:

57 ns

 

Technical parameters/Input capacitance (Ciss):

1100pF @25V(Vds)

 

Technical parameters/descent time:

33 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

35000 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220

 

Dimensions/Height:

16.12 mm

 

Dimensions/Packaging:

TO-220

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRLI630G IRLI630G Vishay Semiconductor 完全替代 TO-220-3
MOSFET N-CH 200V 6.2A TO220FP
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IRLI630G IRLI630G Vishay Siliconix 完全替代 TO-220-3
MOSFET N-CH 200V 6.2A TO220FP
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