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Model IRL510PBF
Description MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 5.6A; TO-220AB; PD 43W; VGS +/-10V
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Brand: Vishay Precision Group
Packaging TO-220
Delivery time
Packaging method
Standard packaging quantity 1
3.99  yuan 3.99yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9458) Minimum order quantity(1)
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Technical parameters/drain source resistance:

0.54 Ω

 

Technical parameters/dissipated power:

43 W

 

Technical parameters/Input capacitance:

250pF @25V

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Leakage source breakdown voltage:

100 V

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220

 

Dimensions/Length:

10.51 mm

 

Dimensions/Height:

15.49 mm

 

Dimensions/Packaging:

TO-220

 

Physical parameters/operating temperature:

-55℃ ~ 175℃

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRL510 IRL510 Vishay Siliconix 功能相似 TO-220-3
Power Field-Effect Transistor, 4A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
PDF
IRL510 IRL510 International Rectifier 功能相似 TO-220
Power Field-Effect Transistor, 4A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
PDF

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