Technical parameters/rated power: | 60 W |
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Technical parameters/number of pins: | 3 |
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Technical parameters/dissipated power: | 60 W |
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Technical parameters/breakdown voltage (collector emitter): | 600 V |
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Technical parameters/thermal resistance: | 40 ℃/W |
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Technical parameters/reverse recovery time: | 37 ns |
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Technical parameters/rated power (Max): | 60 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 60000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Length: | 10.67 mm |
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Dimensions/Width: | 9.65 mm |
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Dimensions/Height: | 4.83 mm |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Not Recommended for New Designs |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRG4BC20KD-S
|
International Rectifier | 完全替代 | TO-263-3 |
Trans IGBT Chip N-CH 600V 16A 60000mW 3Pin(2+Tab) D2PAK Tube
|
||
IRG4BC20KD-S
|
Infineon | 完全替代 | TO-263-3 |
Trans IGBT Chip N-CH 600V 16A 60000mW 3Pin(2+Tab) D2PAK Tube
|
||
IRG4BC20KDSTRLP
|
Infineon | 类似代替 | TO-263-3 |
IGBT 高达 20A,Infineon 优化的 IGBT 设计用于中频应用,可快速响应,为用户提供最大效率。 这些设备利用 FRED 经优化的二极管,从而提供最佳的 IGBT 性能 ### IGBT 晶体管,International Rectifier International Rectifier 提供全面的 IGBT(绝缘栅级双极性晶体管)产品组合,范围从 300V 到 1200V,采用各种技术,可最大程度降低切换和传导损耗,从而提高效率、减少热敏问题并改善功率密度。 公司还提供多种 IGBT 压模,专门设计用于中到高功率模块。 对于需要最大可靠性的模块,可使用可焊接前部金属 (SFM) 压模来消除连接线,从而实现双面冷却,提高热敏性能、可靠性和效率。
|
||
IRG4BC20KDSTRRP
|
International Rectifier | 类似代替 | TO-263 |
IGBT 模块 600V ULTRAFAST 8-25 KHZ COPACK IGBT
|
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