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Model IRGS8B60KPBF
Description Trans IGBT Chip N-CH 600V 28A 3Pin(2+Tab) D2PAK Tube
Product QR code
Brand: International Rectifier
Packaging D2PAK
Delivery time
Packaging method Tube
Standard packaging quantity 1
5.73  yuan 5.73yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6396) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

600 V

 

Technical parameters/rated current:

28.0 A

 

Technical parameters/dissipated power:

167 W

 

Technical parameters/product series:

IRGS8B60K

 

Technical parameters/rise time:

22.0 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

D2PAK

 

Dimensions/Length:

10.67 mm

 

Dimensions/Height:

4.576 mm

 

Dimensions/Packaging:

D2PAK

 

Physical parameters/operating temperature:

-55℃ ~ 175℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRGS8B60KTRLPBF IRGS8B60KTRLPBF Infineon 类似代替 TO-263-3
Trans IGBT Chip N-CH 600V 28A 167000mW 3Pin(2+Tab) D2PAK T/R
PDF
IRGS8B60KTRLPBF IRGS8B60KTRLPBF International Rectifier 类似代替 TO-263-3
Trans IGBT Chip N-CH 600V 28A 167000mW 3Pin(2+Tab) D2PAK T/R
PDF
S8B S8B Infineon 功能相似
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3

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