Technical parameters/rated voltage (DC): | -200 V |
|
Technical parameters/rated current: | -3.60 A |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 42.0 W |
|
Technical parameters/drain source voltage (Vds): | -200 V |
|
Technical parameters/Leakage source breakdown voltage: | -200 V |
|
Technical parameters/Continuous drain current (Ids): | -3.60 A |
|
Technical parameters/rise time: | 27.0 ns |
|
Encapsulation parameters/installation method: | Through Hole |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFU9220
|
VISHAY | 功能相似 | TO-251 |
3.6A , 200V , 1.500欧姆,P沟道功率MOSFET 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
|
||
IRFU9220
|
Vishay Siliconix | 功能相似 | TO-251-3 |
3.6A , 200V , 1.500欧姆,P沟道功率MOSFET 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
|
||
IRFU9220
|
Intersil | 功能相似 |
3.6A , 200V , 1.500欧姆,P沟道功率MOSFET 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
|
|||
IRFU9220
|
International Rectifier | 功能相似 |
3.6A , 200V , 1.500欧姆,P沟道功率MOSFET 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review