Technical parameters/rated voltage (DC): | -100 V |
|
Technical parameters/rated current: | -3.10 A |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 25.0 W |
|
Technical parameters/Leakage source breakdown voltage: | -100 V |
|
Technical parameters/Continuous drain current (Ids): | -3.10 A |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | TO-252-3 |
|
Dimensions/Packaging: | TO-252-3 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR9110
|
VISHAY | 完全替代 | TO-252 |
MOSFET P-CH 100V 3.1A DPAK
|
||
IRFR9110TRLPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 3.1A DPAK
|
||
IRFR9110TRLPBF
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 3.1A DPAK
|
||
IRFR9110TRLPBF
|
Vishay Intertechnology | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 3.1A DPAK
|
||
IRFR9110TRPBF
|
International Rectifier | 完全替代 | TO-252 |
MOSFET P-CH 100V 3.1A DPAK
|
||
IRFR9110TRPBF
|
Vishay Intertechnology | 完全替代 | TO-252 |
MOSFET P-CH 100V 3.1A DPAK
|
||
IRFR9110TRPBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
MOSFET P-CH 100V 3.1A DPAK
|
||
IRFR9110TRPBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET P-CH 100V 3.1A DPAK
|
||
IRFR9120NPBF
|
International Rectifier | 功能相似 | TO-252-3 |
INFINEON IRFR9120NPBF 晶体管, MOSFET, P沟道, 6.6 A, -100 V, 480 mohm, -10 V, -4 V
|
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