Technical parameters/dissipated power: | 3100 mW |
|
Technical parameters/rise time: | 13 ns |
|
Technical parameters/Input capacitance (Ciss): | 260pF @25V(Vds) |
|
Technical parameters/descent time: | 12 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | 55 ℃ |
|
Technical parameters/dissipated power (Max): | 3.1W (Ta), 50W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Packaging: | TO-263-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDD6N25TF
|
ON Semiconductor | 功能相似 | TO-252-3 |
MOSFET N-CH 250V 4.4A DPAK
|
||
IRF624S
|
VISHAY | 类似代替 | TO-263 |
MOSFET N-CH 250V 4.4A D2PAK
|
||
IRF624S
|
International Rectifier | 类似代替 |
MOSFET N-CH 250V 4.4A D2PAK
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review