Technical parameters/polarity: | N-CH |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Continuous drain current (Ids): | 67A |
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Technical parameters/rise time: | 38 ns |
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Technical parameters/Input capacitance (Ciss): | 1220pF @10V(Vds) |
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Technical parameters/descent time: | 4.2 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 57000 mW |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | D2PAK-263 |
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Dimensions/Packaging: | D2PAK-263 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ |
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Other/Product Lifecycle: | Not Recommended for New Designs |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF3704ZSPBF
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Infineon | 功能相似 | TO-263-3 |
N 通道功率 MOSFET 60A 至 79A，Infineon Infineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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