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Model IR2111SPBF
Description INFINEON IR2111SPBF 双路芯片, MOSFET, 高压侧和低压侧, 10V-20V电源, 500mA输出, 150ns延迟, SOIC-8
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Brand: Infineon
Packaging SOIC-8
Delivery time
Packaging method Each
Standard packaging quantity 1
11.54  yuan 11.54yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7252) Minimum order quantity(1)
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Technical parameters/power supply voltage (DC):

10.0V (min)

 

Technical parameters/rated power:

625 mW

 

Technical parameters/rise/fall time:

80ns, 40ns

 

Technical parameters/number of output interfaces:

2

 

Technical parameters/output voltage:

600 V

 

Technical parameters/output current:

250.500 mA

 

Technical parameters/number of channels:

2

 

Technical parameters/number of pins:

8

 

Technical parameters/dissipated power:

625 mW

 

Technical parameters/rise time:

130 ns

 

Technical parameters/descent time:

65 ns

 

Technical parameters/descent time (Max):

65 ns

 

Technical parameters/rise time (Max):

130 ns

 

Technical parameters/operating temperature (Max):

125 ℃

 

Technical parameters/operating temperature (Min):

-40 ℃

 

Technical parameters/dissipated power (Max):

625 mW

 

Technical parameters/power supply voltage:

10V ~ 20V

 

Technical parameters/power supply voltage (Max):

20 V

 

Technical parameters/power supply voltage (Min):

10 V

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Length:

5 mm

 

Dimensions/Width:

4 mm

 

Dimensions/Height:

1.5 mm

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-40℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Each

 

Other/Manufacturing Applications:

Power Management,

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