Chip AI consultant
Technical parameters/drain source voltage (Vds): | 80 V |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Other/Product Catalog: | MOS(Field Effect Transistor |
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Other/continuous drain current (Id) (at 25 ° C): | 200A(Tc) |
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Other/leakage source voltage (Vdss): | 80V |
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Other/Gate Source Threshold Voltage: | 4V @ 250uA |
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Other/leakage source conduction resistance: | 3. 5 mΩ @ 100A,10V |
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Other/Type: | N channel |
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Other/maximum power dissipation (Ta): | 345W(Tc) |
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Other/Product Code: | C110667 |
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Other/Packaging Specifications: | TO-220(TO-220-3) |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
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