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Technical parameters/number of pins: | 3 |
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Technical parameters/dissipated power: | 150 mW |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/minimum current amplification factor (hFE): | 120 @1mA, 6V |
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Technical parameters/maximum current amplification factor (hFE): | 120 @1mA, 6V |
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Technical parameters/rated power (Max): | 150 mW |
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Technical parameters/DC current gain (hFE): | 120 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-416-3 |
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Dimensions/Length: | 1.8 mm |
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Dimensions/Width: | 0.9 mm |
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Dimensions/Height: | 0.85 mm |
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Dimensions/Packaging: | SOT-416-3 |
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Other/Product Lifecycle: | Obsolete |
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Other/Manufacturing Applications: | Communication and Networking, Consumer Electronics, Power Management, Industrial |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC847ALT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847ALT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
||
BC847CLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847CLT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
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