Technical parameters/drain source voltage (Vds): | 400 V |
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Technical parameters/rise time: | 65 ns |
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Technical parameters/Input capacitance (Ciss): | 625pF @25V(Vds) |
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Technical parameters/rated power (Max): | 73 W |
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Technical parameters/descent time: | 38 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 73000 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQU2N100TU
|
Fairchild | 功能相似 | TO-251-3 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQU2N100TU, 1.6 A, Vds=1000 V, 3引脚 IPAK (TO-251)封装
|
||
FQU2N100TU
|
ON Semiconductor | 功能相似 | TO-251-3 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQU2N100TU, 1.6 A, Vds=1000 V, 3引脚 IPAK (TO-251)封装
|
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