Technical parameters/rated voltage (DC): | 60.0 V |
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Technical parameters/rated current: | 13.0 A |
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Technical parameters/drain source resistance: | 135 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 24W (Tc) |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Leakage source breakdown voltage: | 60.0 V |
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Technical parameters/breakdown voltage of gate source: | ±25.0 V |
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Technical parameters/Continuous drain current (Ids): | 9.40 A |
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Technical parameters/Input capacitance (Ciss): | 310pF @25V(Vds) |
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Technical parameters/rated power (Max): | 24 W |
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Technical parameters/dissipated power (Max): | 24W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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Customs Information/Hong Kong Import and Export License: | NLR |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQPF13N06
|
Fairchild | 类似代替 | TO-220-3 |
MOSFET N-CH 60V 9.4A TO-220F
|
||
FQPF13N06
|
Freescale | 类似代替 |
MOSFET N-CH 60V 9.4A TO-220F
|
|||
FQPF13N06L
|
ON Semiconductor | 类似代替 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FQPF13N06L 晶体管, MOSFET, N沟道, 10 A, 60 V, 0.088 ohm, 10 V, 2.5 V
|
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