Technical parameters/rated voltage (DC): | 80.0 V |
|
Technical parameters/rated current: | 19.6 A |
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Technical parameters/drain source resistance: | 60.0 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 2.5W (Ta), 50W (Tc) |
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Technical parameters/drain source voltage (Vds): | 80 V |
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Technical parameters/Leakage source breakdown voltage: | 80.0 V |
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Technical parameters/breakdown voltage of gate source: | ±25.0 V |
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Technical parameters/Continuous drain current (Ids): | 19.6 A |
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Technical parameters/Input capacitance (Ciss): | 750pF @25V(Vds) |
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Technical parameters/dissipated power (Max): | 2.5W (Ta), 50W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR024NTRPBF
|
International Rectifier | 功能相似 | TO-252-3 |
INFINEON IRFR024NTRPBF 晶体管, MOSFET, N沟道, 17 A, 55 V, 0.075 ohm, 10 V, 4 V
|
||
NTD3055L104T4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR NTD3055L104T4G 晶体管, MOSFET, N沟道, 12 A, 60 V, 0.089 ohm, 5 V, 1.6 V
|
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