FQH44N10_F133 In Stock|PDF|Datasheet|Price|Agent[FQH44N10_F133 Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

Warm reminder: The pictures are for reference only. The actual product may vary

Model FQH44N10_F133

Description QFET ® N-channel MOSFET, over 31A, Fairchild Semiconductor's new QFET ® Planar MOSFETs use advanced patented technology to provide optimal performance for a wide range of applications, including power supplies, PFC (power factor correction), DC-DC converters, plasma display panels (PDP), lighting ballasts, and motion control. They reduce on state losses by lowering the on resistance (RDS (on)), and reduce switching losses by lowering the gate charge (Qg) and output capacitance (Coss). By utilizing advanced QFET technology ® Fairchild can provide higher quality factor (FOM) than competing planar MOSFET devices in terms of process technology. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.

Brand: Fairchild

Packaging TO-247-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(3806) Minimum order quantity(1)

Add to Cart Buy now

Welcome to use ICGOODFIND AI Assistant

Chip AI consultant

Download related files

PDF

Specification parameters
PDF
Silk screen printing
Review and share the purchase （0 ）
Product inquiry (0)
Selection Manual
Adapter model (0)

Technical parameters/polarity:	N-CH
Technical parameters/dissipated power:	180 W
Technical parameters/drain source voltage (Vds):	100 V
Technical parameters/Continuous drain current (Ids):	48A
Technical parameters/rise time:	190 ns
Technical parameters/Input capacitance (Ciss):	1800pF @25V(Vds)
Technical parameters/rated power (Max):	180 W
Technical parameters/descent time:	100 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	180W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-247-3
Dimensions/Length:	15.87 mm
Dimensions/Width:	4.82 mm
Dimensions/Height:	20.82 mm
Dimensions/Packaging:	TO-247-3
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free